MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

Power MOSFET (N-ch 250V VDSS 500V)

isc N-Channel MOSFET Transistor

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Official Site : http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en • Low drain-source ON-resistance: RDS (ON)= 0.62 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 5.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 500

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 30 - 60 Volts CURRENT 10 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop * Guardring for o

isc N-Channel MOSFET Transistor

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