MOSFETsSiliconN-ChannelMOS

Applications •SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

iscN-ChannelMOSFETTransistor

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TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType

OfficialSite:http://www.semicon.toshiba.co.jp/info/lookup.jsp?pid=TK10A50D&lang=en •Lowdrain-sourceON-resistance:RDS(ON)=0.62Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=5.0S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=500

SCHOTTKYBARRIERRECTIFIERS(10A,30-60V)

SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestat-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingand

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE30-60VoltsCURRENT10Amperes FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *MetalSiliconjunction,majoritycarrierconduction *Lowpowerloss,highefficiency *Highcurrentcapability,lowforwardvoltagedrop *Guardringforo

iscN-ChannelMOSFETTransistor

文件：289.02 Kbytes Page：2 Pages