丝印代码：K10A60D；Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 马来西亚 Drain current ID 10 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 10 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V ;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.05Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A (Tc=114°C). • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.52V(Typ.)

SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A (Tc=114°C). • Repetitive Peak Reverse Voltage : VRRM=60V. • Fast Reverse Recovery Time : trr=35ns. • Low Peak Forward Voltage : 0.52V(Typ.)

FRD - Low Forward Voltage Drop

FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

FAST RECTIFIERS(10A,300-600V)

Ultra Fast Recovery Rectifier Diodes ULTRA FAST RECTIFIERS 10 AMPERES 300 -- 600 VOLTS