Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS= 10 μA(max)(VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=550V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.72Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.75Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (N-ch 500V VDSS 700V)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=10A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.05Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

PLASTIC SILICON RECTIFIERS

FEATURES Low cost Low leakage Low forward voltage drop High current capability Diffused junction Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents The plastic material carries U/L recognition 94V-0

Low reverse leakage

FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers

LEADED (THRU-HOLE) General Purpose & Fast Recovery Rectifiers GENERAL PURPOSE RECTIFIERS (Including Glass Passivated, use G suffix) Operating Temperature: -65°C to 125° FAST RECOVERY Operating Temperature: -65°C to 125°C

GENERAL PURPOSE SILICON RECTIFIER

FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capability ● High temperature soldering guaranteed: 250 °C/10 seconds,0.375”(9.5mm) le

GENERAL PURPOSE SILICON RECTIFIER

文件：672.7 Kbytes Page：2 Pages