COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil

封装/外壳：TO-220-3 整包 包装：剪切带（CT） 描述：TRANS PNP DARL 100V 5A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220FP Tube

Complementary power Darlington transistors

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

Silicon epitaxial planar type

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