isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

Complementary power Darlington transistors

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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封装/外壳：TO-220-3 整包 包装：剪切带（CT） 描述：TRANS PNP DARL 100V 5A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220FP Tube

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Ultra High Frequency Transistor Arrays

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Heavy Duty Male Blades for Range and Dryer

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CRIMP TERMINAL

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Heavy Duty Male Blades for Range and Dryer

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PITCH HEADER

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