EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. • Low Collector-Emitter Saturation Voltage. • Complementary to TIP117F.

EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

EPITAXIAL PLANAR NPN TRANSISTOR

文件：450.47 Kbytes Page：2 Pages

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

Operational Amplifiers

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