TH58价格

参考价格:¥32.5127

型号:TH58BVG2S3HTA00_TRAY 品牌:TOS 备注:这里有TH58多少钱,2024年最近7天走势,今日出价,今日竞价,TH58批发/采购报价,TH58行情走势销售排行榜,TH58报价。
型号 功能描述 生产厂家&企业 LOGO 操作

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION TheTH58100isasingle3.3V1-Gbit(1,107,296,256)bitNANDElectricallyErasableandProgrammableRead-OnlyMemory(NANDE2PROM)organizedas528bytesx32pagesx8192blocks.Thedevicehasa528-bytestaticregisterwhichallowsprogramandreaddatatobetransferredbetweent

TOSHIBAToshiba Semiconductor

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TOSHIBA

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION TheTH58BVG3S0HBAI4isasingle3.3V8Gbit(8,858,370,048bits)NANDElectricallyErasableand ProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(4096+128)bytes×64pages×4096blocks. Thedevicehasa4224-bytestaticregisterwhichallowsprogramandreaddatatobetr

TOSHIBAToshiba Semiconductor

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TOSHIBA

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION TheTH58BVG3S0HBAI6isasingle3.3V8Gbit(8,858,370,048bits)NANDElectricallyErasableand ProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(4096+128)bytes×64pages×4096blocks. Thedevicehasa4224-bytestaticregisterwhichallowsprogramandreaddatatobetr

TOSHIBAToshiba Semiconductor

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TOSHIBA

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION TheTH58BVG3S0HTAI0isasingle3.3V8Gbit(8,858,370,048bits)NANDElectricallyErasableand ProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(4096+128)bytes×64pages×4096blocks. Thedevicehasa4224-bytestaticregisterwhichallowsprogramandreaddatatobetr

TOSHIBAToshiba Semiconductor

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TOSHIBA

8 GBIT (1G × 8 BIT) CMOS NAND E2PROM

DESCRIPTION TheTH58BYG3S0HBAI4isasingle1.8V8Gbit(8,858,370,048bits)NANDElectricallyErasableand ProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(4096+128)bytes×64pages×4096blocks. Thedevicehasa4224-bytestaticregisterwhichallowsprogramandreaddatatobetr

TOSHIBAToshiba Semiconductor

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TOSHIBA

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2GBIT(256Mu8BITS)CMOSNANDE2PROM DESCRIPTION TheTH58NVG1S3Aisasingle3.3-V2G-bit(2,214,592,512bits)NANDElectricallyErasableandProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(2048+64)bytesx64pagesx2048blocks.Thedevicehasa2112-bytestaticregisterswhic

TOSHIBAToshiba Semiconductor

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TOSHIBA

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2GBIT(256Mu8BITS)CMOSNANDE2PROM DESCRIPTION TheTH58NVG1S3Aisasingle3.3-V2G-bit(2,214,592,512bits)NANDElectricallyErasableandProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(2048+64)bytesx64pagesx2048blocks.Thedevicehasa2112-bytestaticregisterswhic

TOSHIBAToshiba Semiconductor

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TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

32 GBIT (4G 횞 8 BIT) CMOS NAND E2PROM

32GBIT(4G×8BIT)CMOSNANDE2PROM DESCRIPTION TheTH58NVG5S0Fisasingle3.3V32Gbit(36,305,895,424bits)NANDElectricallyErasableandProgrammableRead-OnlyMemory(NANDE2PROM)organizedas(4096+232)bytes×64pages×16384blocks.Thedevicehastwo4328-bytestaticregiste

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storge Products Company

NANDFlashMemory(SLCLargeCapacity)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Semiconductor & Storage Products

1.1.GeneralDescription ToggleDDRisaNANDinterfaceforhighperformanceapplicationswhichsupportdatareadandwriteoperations usingbidirectionalDQS. ToggleDDRNANDhasimplemented’DoubleDataRate’withoutaclock.Itiscompatiblewithfunctionsand commandwhichhavebeensuppor

TOSHIBAToshiba Semiconductor

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TOSHIBA

128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia??

128Mbit(16Mx8bit)CMOSNANDE2PROM(16MBYTESmartMedia™)

TOSHIBAToshiba Semiconductor

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TOSHIBA

128Mbit (16M x 8bit) CMOS NAND E2PROM

TOSHIBAMOSDIGITALINTEGRATEDCIRCUITSILICONGATECMOS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

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TOSHIBA

封装/外壳:67-VFBGA 包装:托盘 描述:IC FLASH 4G 67VFBGA 集成电路(IC) 存储器

Kioxia America, Inc.

Kioxia America, Inc.

Kioxia America, Inc.

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:托盘 描述:IC FLASH 4GBIT PARALLEL 48TSOP I 集成电路(IC) 存储器

Kioxia America, Inc.

Kioxia America, Inc.

Kioxia America, Inc.

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件:2.74223 Mbytes Page:54 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

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TOSHIBA

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

文件:432.87 Kbytes Page:43 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

USB 2.0 high-speed Flash drive controller

文件:614.48 Kbytes Page:32 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件:1.95696 Mbytes Page:67 Pages

KIOXIAKIOXIA Corporation

铠侠铠侠电子(中国)有限公司

KIOXIA

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件:1.90402 Mbytes Page:67 Pages

KIOXIAKIOXIA Corporation

铠侠铠侠电子(中国)有限公司

KIOXIA

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件:1.87898 Mbytes Page:67 Pages

KIOXIAKIOXIA Corporation

铠侠铠侠电子(中国)有限公司

KIOXIA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件:1.89498 Mbytes Page:67 Pages

KIOXIAKIOXIA Corporation

铠侠铠侠电子(中国)有限公司

KIOXIA

SLC NAND & BENAND Reliability and Performance

文件:868 Kbytes Page:2 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Flash Memory

文件:2.51174 Mbytes Page:20 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

TH58产品属性

  • 类型

    描述

  • 型号

    TH58

  • 功能描述

    IC FLASH 1GBIT 50NS 48TSOP

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    150

  • 系列

    - 格式 -

  • 存储器

    EEPROMs - 串行

  • 存储器类型

    EEPROM

  • 存储容量

    4K(2 x 256 x 8)

  • 速度

    400kHz

  • 接口

    I²C,2 线串口

  • 电源电压

    2.5 V ~ 5.5 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    8-VFDFN 裸露焊盘

  • 供应商设备封装

    8-DFN(2x3)

  • 包装

    管件

  • 产品目录页面

    1445(CN2011-ZH PDF)

更新时间:2024-6-16 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
TSOP48
9000
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
23+
TSOP
20000
原厂原装正品现货
TOSHIBA
2020+
TSOP
16800
绝对原装进口现货,假一赔十,价格优势!?
TOSHIBA
2016+
TSOP48
6523
只做进口原装现货!假一赔十!
Toshiba
2022
ICFLASH1GBIT50NS48TSOP
5058
原厂原装正品,价格超越代理
TOSHIBA
22+
TSOP
2000
原装正品现货
TOSHIBA
23+
TSOP
1320
TOSHIBA
21+
TSOP
12000
进口原装正品现货
TOS
02+
TSOP
9
TOSHIBA
22+
TSOP
10000
原装正品优势现货供应

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    型号:TGM-340NA 厂商:HALO 封装:SOP6 联系人:陈先生电话:18018738768(微信同号) QQ:1005525513 我司有一手货源,价优,可以长期提供大量,优质的货源,专业的渠道,物美价廉是公司与客户之间共同的理念 深圳市弘扬盛电子专业经销网络滤波器,网络变压器,RJ45网络连接器系列,USB连接器系列,RJ11插座系类,

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