DESCRIPTION

The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes x 32 pages).

FEATURES

• Organization

Memory cell allay 528 x 128K x 8 x 2

Register 528 x 8

Page size 528 bytes

Block size (16K + 512) bytes

• Modes

Read, Reset, Auto Page Program

Auto Block Erase, Status Read

Multi Block Program, Multi Block Erase

• Mode control

Serial input/output

Command control

• Power supply VCC = 2.7 V to 3.6 V

• Program/Erase Cycles 1E5 cycle (with ECC)

• Access time

Cell array to register 25 μs max

Serial Read Cycle 50 ns min

• Operating current

Read (50 ns cycle) 10 mA typ.

Program (avg.) 10 mA typ.

Erase (avg.) 10 mA typ.

Standby 100 μA

• Package

TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)