300um Discrete pHEMT

Key Features and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.620 mm x 0.514 mm Primary Applications • Low Noise amplifiers

300um Discrete pHEMT

文件：1.12823 Mbytes Page：5 Pages

300um Discrete pHEMT

300um Discrete pHEMT

Key Features and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.620 mm x 0.514 mm Primary Applications • Low Noise amplifiers

300um Discrete pHEMT

文件：1.12823 Mbytes Page：5 Pages

300um Discrete pHEMT

POWER TRANSISTORS(16A,100-160V,125W)

16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar

50 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat

POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts)

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