Very Low Inductance Design

文件：333.22 Kbytes Page：2 Pages

35 Watt TO220 Package Thick Film Power

文件：157.24 Kbytes Page：1 Pages

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.