| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 |   | |
CEB35P10 | P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =92mW @VGS = -4.5V. Lead-free plating ; RoHS compliant. | CET-MOS 华瑞 | | |
CEB35P10 | P Channel MOSFET | CET 华瑞 | | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Pb-free lead plating ; RoHS compliant. Halogen Free. Applications Switched mode power supplies. Lighting. DC Motor control. Load switch. battery powered. | CET-MOS 华瑞 | | ||
P Channel MOSFET | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
Very Low Inductance Design 文件：333.22 Kbytes Page：2 Pages | OHMITE | | ||
35 Watt TO220 Package Thick Film Power 文件：157.24 Kbytes Page：1 Pages | OHMITE | |
CEB35P10产品属性
- 类型
描述
- BVDSS(V)：
-100/
- Rds(on)mΩ@10V：
76/
- Rds(on)mΩ@4.5V：
92/
- ID(A)：
-32/
- Qg(nC)@10V(typ)：
75/
- RθJC(℃/W)：
1.2
- Pd(W)：
125
- Configuration：
Single
- Polarity：
P
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO263 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO-263 |
525600 |
||||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
CET/华瑞 |
SOT-263 |
7006 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
25+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET |
2023+ |
TO-263 |
50000 |
原装现货 |
|||
ADI |
23+ |
N/A |
8000 |
只做原装现货 |
|||
ADI |
23+ |
N/A |
7000 |
||||
CET(华瑞) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
CEB35P10芯片相关品牌
CEB35P10规格书下载地址
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2019-11-25
DdatasheetPDF页码索引
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