3轴运动控制芯片

TC6013是一款同时控制3个伺服马达或步进马达的运动控制芯片，采用LQFP144封装，芯片以脉冲口形式输出，可对伺服马达和步进马达位置、插补输出、IO控制等。 • 独立3轴驱动\r\n\r\n• 最大驱动速度4M PPS\r\n\r\n• CPU接口总线8/16位\r\n\r\n• 32bit圆弧/直线插补\r\n\r\n• 驱动状态实时监控\r\n\r\n• 通用输入输出和手轮输出控制\r\n\r\n• 实现多轴并联插补\r\n\r\n• 系统实时监控，易于进行反馈控制;

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7™ Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along wit

Silicon Industrial Rectifier 20 Amp

Description: The NTE6013 is a 20 Ampere (RMS) silicon rectifier in an electrically isolated TO220 type package with a voltage rating of 600V for use in common anode or common cathode circuits. This device features a glass–passivated junction to ensure long term reliability and stability. In add