Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

封装/外壳：轴向，CAN 包装：散装 描述：CAP ALUM 40UF 250V AXIAL 电容器 铝电解电容器

128-MBIT (16M X 8 BITS) CMOS NAND E2PROM

128-MBIT (16M × 8 BITS) CMOS NAND E2PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte static register which allows progr

128-MBIT (16M X 8 BITS) CMOS NAND E2PROM

128-MBIT (16M × 8 BITS) CMOS NAND E2PROM DESCRIPTION The TC581282A is a single 3.3 V 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 1024 blocks. The device has a 528-byte static register which allows progr

16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM

16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64K X 8 bits. The device is oranized as 264 byte X 16 pages X 512 blocks.

256-MBIT (32M X 8 BITS) CMOS NAND E2PROM

DESCRIPTION The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between

256-MBIT (32M x 8BITS) CMOS NAND EEPROM

256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

256-MBIT (32M x 8BITS) CMOS NAND EEPROM

256-MBIT (32M x 8 BITS) CMOS NAND E2PROM

Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM

DESCRIPTION The TC58BVG2S0HBAI6 is a single 3.3V 4Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048 blocks. The device has a 4224-byte static register which allows program and read data to be tr

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

8 GBIT (1G × 8 BIT) CMOS NAND E2 PROM

DESCRIPTION The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has two 4224-byte static registers which allow program and read data to be tran

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM

DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2 PROM) organized as 528 bytes/264 words u32 pages u1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCCand 1.65 V to 1.95 V for VCCQ). The dev

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

DESCRIPTION The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u32 pages u4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between t

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

512-MBIT (64M u 8 BITS) CMOS NAND E2PROM DESCRIPTION The device is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 4096 blocks. The device has a 528-byte static register which allows program

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microproces

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microproces

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microproces

128-MBIT (16M × 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY

DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 × 8 bits or as 8388608 × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microproces

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 짰8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)

256-MBIT (32M × 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMedia™) DESCRIPTION The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks. The device has a 528-byte static regi

1 GBIT (128M 횞 8 BITS) CMOS NAND EEPROM

1 GBIT (128M × 8 BITS) CMOS NAND EEPROM DESCRIPTION The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes × 64 pages × 1024 blocks. The device has a 2112-byte static registers which

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

High PFC, AC-DC LED Driver IC

文件：216.23 Kbytes Page：4 Pages

128-MBIT (16M X 8 BITS) CMOS NAND E2PROM

128-MBIT (16M × 8 BITS) CMOS NAND E2PROM

128-MBIT (16M 횞 8 BITS) CMOS NAND E2PROM

文件：617.1 Kbytes Page：33 Pages

16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM

32 MBIT (4M x 8BIT) CMOS NAND E2PROM

文件：1.82641 Mbytes Page：38 Pages

32 MBIT (4M X 8 BITS) CMOS NAND E2PROM

文件：1.78538 Mbytes Page：38 Pages

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：420.76 Kbytes Page：43 Pages

4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM

文件：1.37634 Mbytes Page：30 Pages

4 MBIT (4M x 1BITS) CMOS AUDIO NAND E2PROM

文件：1.37634 Mbytes Page：30 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.41881 Mbytes Page：46 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.41348 Mbytes Page：46 Pages

封装/外壳：67-VFBGA 包装：散装 描述：IC FLASH 1GBIT PARALLEL 67VFBGA 集成电路（IC） 存储器

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.4006 Mbytes Page：46 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.39341 Mbytes Page：46 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.61792 Mbytes Page：53 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.6232 Mbytes Page：53 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.60639 Mbytes Page：53 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.60133 Mbytes Page：53 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.53187 Mbytes Page：53 Pages

MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

文件：1.60258 Mbytes Page：53 Pages