16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64K X 8 bits. The device is oranized as 264 byte X 16 pages X 512 blocks.

16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM

4-TO-16 LINE LATCHED DECODER/DRIVERS

4-TO-16 LINE LATCHED DECODER/DRIVERS The UCN5816A and UCN5816EP 4-to-16 line latched decoder/drivers combine low-power CMOS inputs and logic with 16 highcurrent, high-voltage bipolar outputs. The CMOS inputs cause minimal loading and are compatible with standard CMOS, PMOS, and NMOS logic. TTL or

BROADBAND: RF & WIRELESS

RF, HFC & CATV APPLICATIONS Pluse offers a comprehensive line of RF magnetic components for use in wireless and RF applications, including mobile communications, cable television, hybrid fiber/coax (HFC) equipment, cable modems, set-top boxes, and home networking. The components are al

AFE5816 16-Channel Ultrasound AFE With 90mW/Channel Power, 1nV/√ Hz Noise, 14-Bit, 65-MSPS or 12-Bit, 80 MSPS ADC and Passive CW Mixer

1 Features • 16-channel, AFE for ultrasound applications: – Input attenuator, LNA, LPF, ADC, and CW mixer – Optimized signal chains for TGC and CW modes – Digital time gain compensation (DTGC) – Total gain range: 6dB to 45dB – Linear input range: 1VPP • Input attenuator with DTGC: – 8dB

ADS5294 Octal-Channel 14-Bit 80-MSPS High-SNR and Low-Power ADC

1 Features 1• Maximum Sample Rate: 80 MSPS/14-Bit • High Signal-to-Noise Ratio – 75.5-dBFS SNR at 5 MHz / 80 MSPS – 78.2-dBFS SNR at 5 MHz / 80 MSPS and Decimation Filter Enabled – 84-dBc SFDR at 5 MHz / 80 MSPS • Low Power Consumption – 58 mW/CH at 50 MSPS – 77 mW/CH at 80 MSPS (2-LVDS W

16-Channel Ultrasound AFE

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