DESCRIPTION

The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable

Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

The device has two 4224-byte static registers which allow program and read data to be transferred between the

register and the memory cell array in 4224-byte increments. The Erase operation is implemented in a single block

unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).

The TC58DVG3S0E is a serial-type memory device which utilizes the I/O pins for both address and data

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage

FEATURES

• Organization

x8

Memory cell array 4224 × 256K × 8

Register 4224 × 8

Page size 4224 bytes

Block size (256K + 8K) bytes

• Modes

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

• Mode control

Serial input/output

Command control

• Number of valid blocks

Min 4016 blocks

Max 4096 blocks

• Power supply

VCC = 2.7V to 3.6V

• Access time

Cell array to register 30 µs max

Serial Read Cycle 25 ns min (CL=50pF)

• Program/Erase time

Auto Page Program 350 µs/page typ.

Auto Block Erase 3 ms/block typ.

• Operating current

Read (25 ns cycle) 30 mA max.

Program (avg.) 30 mA max

Erase (avg.) 30 mA max

Standby 50 µA max

• Package

TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

• TBD bit ECC for each 528Byte is required.