4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

DESCRIPTION The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates

4,194,304 WORD x 1 BIT/1,048,576 WORD x 4 BIT CMOS STATIC RAM

Description The TC551402J is a 4,194,304 bit high speed CMOS static random access memory that is configurable to an organization of either 4,194,304 words by 1 bit or 1,048,576 words by 4 bits when power is initially applied to the device. The mode (x1/x4) is selected by the input level of pin

4,194,304 WORD BY 1-BIT/1,048,576 WORD BY 4 BIT CMOS STATIC RAM

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

Ford Modular Coil-on-Plug

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SOIC Clip Test Clip Kit

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Wire Wound Chip Inductors

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20 (10/30) AWG Tinned Copper

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