包装：散装 描述：SOLDER SPONGE 2.5X2.5\ 焊接，拆焊，返修产品 焊接海绵，烙铁头清洁剂

50mA, 100mA, and 150mA CMOS LDOs with Shutdown and Error Output

General Description The TC2054, TC2055 and TC2186 are high accuracy (typically ±0.4) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ total supply current is typically 55 µA at full load (20 to 60 times lower than in bipola

50mA, 100mA, and 150mA CMOS LDOs with Shutdown and Error Output

General Description The TC2054, TC2055 and TC2186 are high accuracy (typically ±0.4) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ total supply current is typically 55 µA at full load (20 to 60 times lower than in bipola

1446-Channel 6-bit SIPI™ Source Driver

TC2055 is a 1446/1440/1368/1284/1206/1086-channel source driver for high resolution TFT LCD. It is designed for COG (Chip-on-glass) application. The input interface is SIPI™ (Scalable Intra Panel Interface) which was developed and patented by Parade Technologies. SIPI is a high speed, point-to-point 1446 channel source driver for TFT LCD\nSIPI 1.2 interface with 1 or 2 lane operation up to 1.2Gb/s per laneSupports Pin/Register controlled 1-lane/2-lane configuration\nDisplay data scrambling and 8B/10B encoding\nEmbedded clocking\nError correction for all control data\nLow EMI/RFI\n\nDriver Outpu;

100mA CMOS LDO with Shutdown and Error Output

The TC2054, TC2055, and TC2186 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators. Designed specifically for battery-operated systems, the devices’ total supply current is typically 55µA at full load (20 to 60 times lower than in bipolar regulators). The Very Low Supply Current for for Longer Battery Life (55 µA typical)\nVery Low Dropout Voltage (90 mV typical @ 100mA)\nHigh Output Voltage Accuracy (±0.4% typical)\nPower-Saving Shutdown Mode\nERROR Output Can Be Used as a Low Battery Detector, or Processor Reset Generator\nFast Shutdown Respons;

1446-Channel 8-bit SIPI™ Source Driver

TC2058 is a 1446/1440/1368/1356/1284/1230/1206/1086-channel source driver for high resolution TFT LCD. It is designed for COG (Chip-on-glass) application. The input interface is SIPI™ (Scalable Intra Panel Interface) which was developed and patented by Parade Technologies. SIPI is a high speed, poin 1446 channel source driver for TFT LCD\nSIPI 1.2 interface with 1 or 2 lane operation up to 1.4Gb/s per laneDisplay data scrambling and 8B/10B encoding\nEmbedded clocking\nError correction for all control data\nLow EMI/RFI\nPower saving mode with CD_VBLANK & VB_PD\n\nDriver Output: 1446/1440/1368/13;

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions

STANDARD SHAFT SEALS

DESCRIPTION The TC profile is a shaft seal composed of a single metal cage with a rubber coating, a primary sealing lip with integrated spring and an additional anti-pollution lip. APPLICATIONS Shaft sealing Engines Pumps Transmissions

包装：散装 描述：BOARD RETAINING FOR TC2050-NL 开发板，套件，编程器 配件

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：943.83 Kbytes Page：18 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：943.83 Kbytes Page：18 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

50 mA, 100 mA, and 150 mA CMOS LDOs with Shutdown and Error Output

文件：442.07 Kbytes Page：22 Pages

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.