Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Very low profile - typical height of 0.95 mm • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Ideal for automated placement • Unidirectional only • Excellent cl

Surface-Mount PAR® Transient Voltage Suppressors

封装/外壳：DO-221AC，SMA 扁平引线 包装：卷带（TR） 描述：TVS DIODE 20.5VWM 33.2VC DO221AC 电路保护 TVS - 二极管

封装/外壳：DO-221AC，SMA 扁平引线 包装：卷带（TR） 描述：TVS DIODE 20.5VWM 33.2VC DO221AC 电路保护 TVS - 二极管

Automotive 600 W TVS in SOD128 Flat

Features • AEC-Q101 qualified • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Stand-off voltage range from 5 V to 36 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at 175 °C (Tj max.) up to 240

General Purpose Connectors with Crimp Contacts

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N-Channel Enhancement Mode MOSFET

文件：306.27 Kbytes Page：11 Pages

N-Channel 650V (D-S) Power MOSFET

文件：2.16155 Mbytes Page：10 Pages

N-Channel Enhancement Mode MOSFET

文件：306.27 Kbytes Page：11 Pages