N-Channel Enhancement Mode MOSFET

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N-Channel 650V (D-S) Power MOSFET

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N-Channel MOSFET

N-Channel MOSFET

N-Channel Enhancement Mode MOSFET

文件：306.27 Kbytes Page：11 Pages

N-Channel Enhancement Mode MOSFET

文件：306.27 Kbytes Page：11 Pages

Surface-Mount TRANSZORB® Transient Voltage Suppressors

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Unidirectional only • Excellent clamping capability • Peak pulse power: - 600 W (10/1000 μs) - 4 kW (8/20 μs) • ESD capability: IEC 61000-4-2 level 4 - 15 kV (air) - 8 kV (contact) • Meets MSL leve

丝印代码：6BQ；600 W TVS in SMA Flat

Features • Peak pulse power: 600 W (10/1000 μs) and 4 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to 40

Surface-Mount PAR® Transient Voltage Suppressors

FEATURES • Very low profile - typical height of 0.95 mm • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Ideal for automated placement • Unidirectional only • Excellent cl

600W, 12V ??60V Surface Mount Transient Voltage Suppressor

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