Power Chip Resistors Thick Film on Alumina Substrate

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High Power Density

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Power Chip Thick Film on Alumina Substrate

Power Chip® Thick Film on Alumina Substrate Ohmite’s original Power Chip resistors feature our thick film on alumina substrate technology. These planar packages yield space saving, 10W/in2 power densities that require over 50 less board space than other radial packages. Convection cooling is maxi

Power Chip Thick Film on Alumina Substrate

Power Chip® Thick Film on Alumina Substrate Ohmite’s original Power Chip resistors feature our thick film on alumina substrate technology. These planar packages yield space saving, 10W/in2 power densities that require over 50 less board space than other radial packages. Convection cooling is maxi

Power Chip Thick Film on Alumina Substrate

Power Chip® Thick Film on Alumina Substrate Ohmite’s original Power Chip resistors feature our thick film on alumina substrate technology. These planar packages yield space saving, 10W/in2 power densities that require over 50 less board space than other radial packages. Convection cooling is maxi

封装/外壳：径向 包装：散装 描述：RES 100 OHM 5% 5W POWERCHIP 电阻器 通孔式电阻器

封装/外壳：径向 包装：散装 描述：RES 10K OHM 5% 5W POWERCHIP 电阻器 通孔式电阻器

插件电阻

插件电阻

插件电阻

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.