型号 功能描述 生产厂家 企业 LOGO 操作
T4312816B

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S

TMT

凯钰科技

T4312816B

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

TMTM Electronics Inc

天微厦门天微电子有限公司

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S

TMT

凯钰科技

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S

TMT

凯钰科技

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S

TMT

凯钰科技

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S

TMT

凯钰科技

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

TMT

凯钰科技

T4312816B产品属性

  • 类型

    描述

  • 型号

    T4312816B

  • 制造商

    TMT

  • 制造商全称

    TMT

  • 功能描述

    8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

更新时间:2026-1-29 13:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TMTECH
ROHS+Original
NA
25
专业电子元器件供应链/QQ 350053121 /正纳电子
ESMT
02/03+
TSOP
378
原装现货海量库存欢迎咨询
TM-TECH
24+
NA
990000
明嘉莱只做原装正品现货
TMT
24+
TSOP
40
ERAR风华
22+
SOT23-3
20000
公司只做原装 品质保证
TMTECH
2023+
TSOP
6893
专注全新正品,优势现货供应
TMTECH
23+
NA
25
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ERAR风华
23+
SOT23-3
3000
全新原装正品现货,支持订货
TMTECH
23+24
N/A+
9680
原盒原标.进口原装.支持实单 .价格优势
TMTECH
25+
TSOP
5000
百分百原装正品 真实公司现货库存 本公司只做原装 可

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