8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM???

GRNERAL DESCRIPTION The T4312816A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with high performance CMOS technology . FEATURES • 3.3V power supply • Four banks operation • LVTTL compatible with multiplexed address • All i

8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM

GRNERAL DESCRIPTION The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the S