0.115A, 60V, 0.2W, N Channel, Power MOSFETs

High Speed Switching Applications

○ High Speed Switching Applications • ESD protected gate • Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) Applications • High-Speed Switching

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

N-Channel Enhancement Mode MOSFET

Features  Low on on-resistance  High-speed switching  Drive circuits can be simple  Parallel use is easy  HBM: AEC-Q101-001: H2 (J ESD22- A114-B:  RoHS compliant with Halogen-free  Qualified to AEC-Q101 Standards Typical Applications  N-channel enhancement mode effect transistor

场效应管(MOSFET)

Small Low ON resistance MOSFETs

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used