55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bia

DC ??6 GHz 18 W GaN RF Power Transistor

General Description The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power

DC – 6 GHz 18 W GaN RF Power Transistor

DC 6 GHz 18 W GaN RF Power Transistor

文件：487.11 Kbytes Page：15 Pages

55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bia

DC 6 GHz 18 W GaN RF Power Transistor

文件：487.11 Kbytes Page：15 Pages

DC 6 GHz 18 W GaN RF Power Transistor

文件：487.11 Kbytes Page：15 Pages