位置:T1G6001528-Q3EVB1 > T1G6001528-Q3EVB1详情

T1G6001528-Q3EVB1中文资料

厂家型号

T1G6001528-Q3EVB1

文件大小

830.91Kbytes

页面数量

4

功能描述

55W, 28V, DC ??3.5GHz, GaN RF Power Transistor

55W, 28V, DC a?? 3.5GHz, GaN RF Power Transistor

数据手册

下载地址一下载地址二到原厂下载

生产厂商

TRIQUINT

T1G6001528-Q3EVB1数据手册规格书PDF详情

General Description

The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25um production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Product Features

• Frequency Range: DC to 3.5 GHz

• Linear Gain: >15 dB at 3.5 GHz

• Operating Voltage: 28 V

• Output Power (P3dB): 55 W at 3.5 GHz

• Lead-free and RoHS compliant

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Avionics

• Wideband or narrowband amplifiers

T1G6001528-Q3EVB1产品属性

  • 类型

    描述

  • 型号

    T1G6001528-Q3EVB1

  • 制造商

    TRIQUINT

  • 制造商全称

    TriQuint Semiconductor

  • 功能描述

    55W, 28V, DC a?? 3.5GHz, GaN RF Power Transistor

更新时间:2025-10-15 10:05:00
供应商 型号 品牌 批号 封装 库存 备注 价格
TriQuint
16+
NA
3000
全新进口原装
TriQuint
2308+
原厂原包
6850
十年专业专注 优势渠道商正品保证
ROHM
24+
SOT89
1000
MICRON/美光
24+
BGA
60000
全新原装现货
MAKOSEMI
23+
SOT-323
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
TI
16+
SOT23
10000
进口原装现货/价格优势!
TI
17+
SOT23
6200
100%原装正品现货
NCC
20
全新原装 货期两周
NCC
2022+
16
全新原装 货期两周
TE/泰科
2508+
/
415341
一级代理,原装现货