PHASE CONTROL THYRISTORS

Phase Control Thyristors

Phase Control Thyristor

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Full blocking 50/60Hz over a wide range temperature range

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Phase Control Thyristor

可控硅/二极管Discs

可控硅/二极管Discs

封装/外壳：TO-200AF 包装：托盘 描述：SCR MODULE 3600V 29900A DO200AE 分立半导体产品 晶闸管 - SCR - 模块

封装/外壳：TO-200AF 包装：托盘 描述：SCR MODULE 3600V 2990A DO200AE 分立半导体产品 晶闸管 - SCR - 模块

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages