High-power GaAs FET (small signal gain stage)

S to X BAND / 0.15W non - matched

DESCRIPTION

The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.

FEATURES

High linear power gain

Glp=8.0dB @f=8GHz

High P1dB

P1dB=21.8dBm(TYP.) @f=8GHz

APPLICATION

S to X Band medium-power amplifiers and oscillators