MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

High-power GaAs FET (small signal gain stage)

High-power GaAs FET (small signal gain stage)\nS to X BAND / 0.15W non - matchedDESCRIPTION\nThe MGF1601B, medium-power GaAs FET with an N-channel  Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic las High linear power gain \n  Glp=8.0dB @f=8GHz\nHigh P1dB\n  P1dB=21.8dBm(TYP.) @f=8GHzAPPLICATION\nS to X Band medium-power amplifiers and oscillators;

MICROWAVE POWER GaAs FET

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High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes Page：4 Pages

MICROWAVE POWER GaAs FET

文件：203.9 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes Page：4 Pages

High-power GaAs FET

文件：288.14 Kbytes Page：4 Pages

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

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PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages