MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

MICROWAVE POWER GaAs FET

文件：203.9 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

MICROWAVE POWER GaAs FET

文件：203.9 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes Page：4 Pages

High-power GaAs FET

文件：288.14 Kbytes Page：4 Pages

IEC Appliance Inlet C20, Screw-on Mounting, Rear Side, PCB Terminal

Description - Panel Mount: Screw-on mounting, from rear-side - Appliance Inlet, Pin temperature 70 °C, Protection class I - For PCB mounting

EU Power Cord with IEC Appliance Connector C19, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

Dual and Quad Data-bus Isolators

DESCRIPTION TThe 1600 series are dual or quad isolation transformer packs for use in digital circuits. They are particularly suited to isolating microprocessor bus connections and performing logic level translation. Being completely passive, power savings are offered over opto-coupled or emitter

CN Power Cord with IEC Appliance Connector C19, V-Lock, straight

文件：392.07 Kbytes Page：2 Pages

AU Power Cord with IEC Appliance Connector C19, V-Lock, straight

文件：373.29 Kbytes Page：2 Pages