Description

The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The STBV32G and STBV32G-AP are supplied using halogen-free molding compound.

Features

■ High voltage capability

■ Low spread of dynamic parameters

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Compact fluorescent lamps (CFLS)

■ SMPS for battery charger