N-channel MOSFET (TO-251 , TO-252)

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitab

N-Channel 60 V (D-S) MOSFET

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N-channel MOSFET (TO-251 , TO-252)

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod

50 Amps, 60 Volts N-CHANNEL POWER MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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50A 60V N-channel Enhancement Mode Power MOSFET

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