N-Channel MOSFET

文件：170.37 Kbytes Page：6 Pages

N-channel MOSFET

文件：377.03 Kbytes Page：5 Pages

N-channel MOSFET

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

N-channel I-PAK/D-PAK/TO-220F MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

N-channel TO-220F/I-PAKN/D-PAK MOSFET

文件：682.69 Kbytes Page：6 Pages

N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET

文件：877.47 Kbytes Page：7 Pages

高压MOSFET

N-channel Enhancement mode TO-251/TO-252MOSFET

文件：638.77 Kbytes Page：6 Pages

N-channel TO-220F/I-PAK/D-PAK MOSFET

文件：678.62 Kbytes Page：6 Pages

N-Channel Planar MOSFET(200V-1000V)

4 Amps, 600 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i

4 Amps竊?00Volts N-Channel MOSFET

文件：543.79 Kbytes Page：5 Pages

4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：397.76 Kbytes Page：8 Pages

N-Channel Power MOSFET

文件：987.64 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：607.6 Kbytes Page：7 Pages