General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter

block and switch mode power supply.

Features

■ High ruggedness

■ RDS(ON) (Max 2.5 Ω)@VGS=10V

■ Gate Charge (Typ 11nC)

■ Improved dv/dt Capability

■ 100 Avalanche Tested