Drivers for GaAs FET Switches and Digital Attenuators

Introduction Many of M/A-COMs GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs FET MMIC Switches and Digital

Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input

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Matched GaAs SPDT Switch

MACOM’s SW-313-PIN is a GaAs FET SPDT absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW-313-PIN is ideally suited for us ·Integral TTL Driver\n·RoHS* Compliant\n·260°C Reflow Compatible\n·Lead-Free CR-9 Package\n·MIL-STD-883 Screening Available\n·50 Ohm Nominal Impedance\n·Hermetic Surface Mount Package\n·Fast Switching Speed: 7 ns Typical\n·Low DC Power Consumption;

Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

Description M/A-COM’s SW-313-PIN is a GaAs FET SPDT absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW-313-PIN is id

Matched GaAs SPDT Switch

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Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

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封装/外壳：CR-9 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF SWITCH SPDT 3GHZ CR-9 RF/IF，射频/中频和 RFID 射频开关

Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

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Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

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Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

文件：545.12 Kbytes Page：5 Pages

Matched GaAs SPDT Switch, DC-3.0 GHz with TTL/CMOS Control Input

文件：140.97 Kbytes Page：4 Pages

包装：盒 描述：EVAL BOARD FOR SW-313-PIN 开发板，套件，编程器 射频评估和开发套件，开发板

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

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