Drivers for GaAs FET Switches and Digital Attenuators

Introduction Many of M/A-COMs GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs FET MMIC Switches and Digital

Matched GaAs SPDT Switch 5 - 3000 MHz

Features ● High Isolation, 50 dB Typical ● Fast Switching Speed ● Low DC Power Consumption ● Integral TTL (SW-205) or CMOS (SW-206) Driver ● MIL-STD-883 Screening Available

Matched GaAs SPDT Switch 5 - 3000 MHz

Features ● High Isolation, 50 dB Typical ● Fast Switching Speed ● Low DC Power Consumption ● Integral TTL (SW-205) or CMOS (SW-206) Driver ● MIL-STD-883 Screening Available

Matched GaAs SPDT Switch, 5 - 3000 MHz

• High Isolation: 50 dB Typical\n• Fast Switching Speed\n• Low DC Power Consumption\n• Integral TTL (SW-205) or CMOS (SW-206) Driver\n• 50 Ohm Nominal Impedance\n• MIL-STD-883 Screening Available ;

Matched GaAs SPDT Switch, 5 - 3000 MHz

Features • High Isolation: 50 dB Typical • Fast Switching Speed • Low DC Power Consumption • Integral TTL (SW-205) or CMOS (SW-206) Driver • 50 Ohm Nominal Impedance • MIL-STD-883 Screening Available

Matched GaAs SPDT Switch, 5 - 3000 MHz

Features • High Isolation: 50 dB Typical • Fast Switching Speed • Low DC Power Consumption • Integral TTL (SW-205) or CMOS (SW-206) Driver • 50 Ohm Nominal Impedance • MIL-STD-883 Screening Available

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

POWER TRANSISTORS(2.5A,1300-1500V,36W)

HORIZONTAL DEFLECTION TRANSISTOR 2.5 AMPERE POWER TRANSISTORS 1300-1500 VOLTS 36 WATTS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

Alternate Source/ Second Source Photodiodes

PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear, cast epoxy sidelooker, similar in outline to the TO-92 package. These diodes exhibit low dark current under reverse bias and fast speed of response.