型号 功能描述 生产厂家 企业 LOGO 操作
SVS7N65D

D-Well系列超级结高压MOSFET

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

SILAN

士兰微

超结MOS功率管

SILAN

士兰微

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

VBSEMI

微碧半导体

650V N-Channel Power MOSFET

Features ● RDS(ON)

DYELEC

迪一电子

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

CHONGQING

平伟实业

7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

文件:180.91 Kbytes Page:6 Pages

UTC

友顺

更新时间:2025-12-26 17:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SILAN
2450+
TO-220F-3L
9850
只做原装正品现货或订货假一赔十!
SILAN/士兰微
24+
明嘉莱只做原装正品现货
2510000
TO-252
士兰微
24+
10000
原装现货
SILAN/士兰微
23+
TO-252-2L
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
士兰微
24+
TO-252
2500
假一赔百原装正品价格优势实单可谈
SILAN/士兰微
21+
TO252
38500
SILAN/士兰微
2023+
TO252
38500
原厂全新正品旗舰店优势现货
SILAN/士兰微
24+
SOT-252
196000
专营SILAN士兰微原装保障
SILAN
1708+
TO-252
8500
只做原装进口,假一罚十
SILAN(士兰微电子)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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