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位置：首页 > IC中文资料 > SVF7N65

型号 功能描述 生产厂家 企业 LOGO 操作
SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RF

丝印代码：SVF7N65RF；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RT

丝印代码：SVF7N65RT；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65F

丝印代码：SVF7N65F；N-channel transistor

文件：323.08 Kbytes Page：10 Pages

SILAN

士兰微

SVF7N65S

丝印代码：SVF7N65S；N-channel transistor

文件：323.08 Kbytes Page：10 Pages

SILAN

士兰微

SVF7N65STR

丝印代码：SVF7N65S；N-channel transistor

文件：323.08 Kbytes Page：10 Pages

SILAN

士兰微

SVF7N65T

丝印代码：SVF7N65T；N-channel transistor

文件：323.08 Kbytes Page：10 Pages

SILAN

士兰微

SVF7N65AS

平面高压MOS功率管

SVF7N65AF/S N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 7A，650V，RDS(on)(典型值)=0.95Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快 \n• 提升了dv/dt 能力;

SILAN

士兰微

SVF7N65BF

平面高压MOS功率管

SVF7N65BF N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 7A，650V，RDS(on)(典型值)=1.1Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

SILAN

士兰微

SVF7N65CD

平面高压MOS功率管

SVF7N65CF/D/MJ/MJL/K/T N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 7A，650V，RDS(on)(典型值)=1.1Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RDTR

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RFJH

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65RMJ

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

SILAN

士兰微

SVF7N65F

isc N-Channel MOSFET Transistor

文件：295.96 Kbytes Page：2 Pages

ISC

无锡固电

SVF7N65T

N-Channel 650V (D-S) Power MOSFET

文件：1.10914 Mbytes Page：10 Pages

VBSEMI

微碧半导体

7N65

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

UTC

友顺

FQA7N65C

650V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

FAIRCHILD

仙童半导体

FQB7N65C

650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FAIRCHILD

仙童半导体

FQP7N65C

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQPF7N65C

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

SVF7N65产品属性

  • 类型

    描述

  • Polarity：

    N

  • Vdss (V)：

    650

  • Id (A)Tc=25℃：

    7

  • Vgs (th) (V)：

    2.0~4.0

  • Rds(on) @10V typ (mΩ)：

    1.1

  • Rds (on) @10Vmax (mΩ)：

    1.4

  • Qg@10Vtyp (nC)：

    21

SVF7N65供应商更多...

更新时间：2026-7-24 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市向鸿伟业电子有限公司
SVF-01T-1.5A
JST/日压
2409+
n/a
8600
原装现货真实库存!量大特价!
询价
深圳市骏创达科技有限公司
SVF-01G-1.5N
JST/日压
2608+
/
473077
一级代理，原装现货
询价
深圳市富达微科技有限公司
SVF-01G-1.5N
JST/日压
24+
端子
5000
原厂原装，价格优势，欢迎洽谈！
询价
现代芯城（深圳）科技有限公司
SVF-01T-1.5A
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市米特尔科技有限公司
SVF-01G-1.5N
JST/日压
22+
连接器
728922
代理-优势-原装-正品-现货*期货
询价
深圳市力拓辉电子有限公司
SVF-01T-1.5N
JST
25+
19150
全新原装正品鄙视假货15118075546
询价
深圳市诚利顺电子科技有限公司
SVF7N65RF
SILAN士兰微
25+
TO220
6500
十七年专营原装现货一手货源,样品免费送
询价
深圳市瑞新盛科技有限公司
SVF7N65RFJH
SILAN/士兰微
24+
TO220F
12000
专营SILAN士兰微原装保障
询价
北京京北通宇电子元件有限公司
SVF-01T-1.5A
JST
2022.12
con
45000
现货常备产品原装可到京北通宇商城查价格
询价
北京天阳诚业科贸有限公司
SVF-01T-1.5A
JST
2026+
SMT
300000
济德91J0-00301替代SVF-01T-1.5A
询价

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