| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 |   | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
isc N-Channel MOSFET Transistor 文件：295.96 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-channel transistor 文件：323.08 Kbytes Page：10 Pages | SILAN 士兰微 | | ||
N-channel transistor 文件：323.08 Kbytes Page：10 Pages | SILAN 士兰微 | | ||
N-channel transistor 文件：323.08 Kbytes Page：10 Pages | SILAN 士兰微 | | ||
N-channel transistor 文件：323.08 Kbytes Page：10 Pages | SILAN 士兰微 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10914 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
650V N-Channel Power MOSFET Features ● RDS(ON) | DYELEC 迪一电子 | | ||
7A mps,650 Volts N-CHANNEL MOSFET FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability | CHONGQING 平伟实业 | | ||
7 Amps, 650 Volts 7 Amps, 650 Volts DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction | VBSEMI 微碧半导体 | | ||
7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET 文件：180.91 Kbytes Page：6 Pages | UTC 友顺 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
24+ |
NA/ |
4186 |
原厂直销,现货供应,账期支持! |
|||
SILAN/士兰微 |
22+ |
TO-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
士兰微 |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
SILAN |
24+ |
TO-220F |
30000 |
公司新到进口原装现货假一赔十 |
|||
SILAN/士兰微 |
23+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-252 |
|||
士兰微 |
24+ |
10000 |
原装现货 |
||||
SILAN |
18+ |
TO220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
SILAN/士兰微 |
23+ |
TO-252 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SILAN |
24+ |
TO-252 |
11000 |
假一赔百原装正品价格优势实单可谈 |
|||
SILAN/士兰微 |
24+ |
TO-220F |
998016 |
代理原装正品现货低价假一赔十 |
SVF7N65芯片相关品牌
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