| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 |   | ||
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 | | ||
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 | | ||
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 | | ||
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 | | ||
4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
平面高压MOS功率管 | SILAN 士兰微 | | ||
Power MOSFET 文件：1.07807 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.90686 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.09026 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications i | UTC 友顺 | | ||
4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：397.76 Kbytes Page：8 Pages | UTC 友顺 | | ||
4 Amps竊?00Volts N-Channel MOSFET 文件：543.79 Kbytes Page：5 Pages | ESTEK 伊泰克电子 | | ||
N-CHANNEL POWER MOSFET 文件：607.6 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | ||
N-Channel Power MOSFET 文件：987.64 Kbytes Page：7 Pages | ARTSCHIP | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN/士兰微 |
23+ |
TO-220F-3L |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SILAN |
24+ |
TO-252 |
30000 |
公司新到进口原装现货假一赔十 |
|||
士兰微 |
2406+ |
TO252 |
71260 |
诚信经营!进口原装!量大价优! |
|||
SILAN/士兰微 |
24+ |
TO220F |
6000 |
原装房间现货可出样品 |
|||
SILAN/士兰微 |
24+ |
T0-252 |
998006 |
代理原装正品现货低价假一赔十 |
|||
SILAN/士兰微 |
24+ |
65230 |
|||||
士兰微 |
21+ |
TO252 |
856000 |
||||
士兰微 |
23+ |
TO-252 |
17500 |
原装正品,假一罚十 |
|||
SILAN |
20+ |
TO-252 |
32500 |
原装优势主营型号-可开原型号增税票 |
|||
SILAN/士兰微 |
22+ |
TO-252 |
12245 |
现货,原厂原装假一罚十! |
SVF4N60芯片相关品牌
SVF4N60规格书下载地址
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