N-Channel 30-V (D-S), 175C MOSFET

N-Channel 30-V (D-S), 175°C MOSFET 175°C Rated Maximum Junction Temperature

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement-Mode Transistor

N-Channel Logic Level PWM Optimized Power MOSFET

General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes Page：8 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages