General Description

This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance.

Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features

• Fast switching

• rDS(ON) = 0.018Ω (Typ), VGS = 10V

• rDS(ON) = 0.028Ω (Typ), VGS = 5V

• Qg (Typ) = 9nC, VGS = 5V

• Qgd (Typ) =3nC

• CISS (Typ) =970pF

Applications

• DC/DC converters