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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-Channel 60-V (D-S) 175C MOSFET

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S), 175 C MOSFET

文件:52.18 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

INTERSIL

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

FAIRCHILD

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

INTERSIL

SUM70N06产品属性

  • 类型

    描述

  • 型号

    SUM70N06

  • 制造商

    Vishay Siliconix

  • 功能描述

    MOSFET N D2-PAK

更新时间:2026-5-24 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
24+
TO-263
35200
一级代理/放心采购
VISHAY
2016+
TO263-2
5254
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY
25+23+
TO263
74097
绝对原装正品现货,全新深圳原装进口现货
VISHAY/威世
22+
TO263-2
3000
原装正品,支持实单
Vishay
26+
原厂原封装
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
VIS
23+
TO-263
10000
原装正品,假一罚十
VISHAY
24+
TO-263
8866
VISHAY/威世
2447
TO263-2
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
世谋微
SSOP-28; QFN4 ×4-32; LQFP-32
1000
VISHAY
20+
na
65790
原装优势主营型号-可开原型号增税票

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