| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
70N06 | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 |   | |
70N06 | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. • RDS(ON) = 15mΩ@VGS = 10 V \n• Ultra low gate charge ( typical 90 nC ) \n• Low reverse transfer Capacitance ( CRSS = typical 80 pF ) \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability; | UTC 友顺 | | |
70N06 | 70A 60V N-CHANNEL MOSFET 文件：388.12 Kbytes Page：14 Pages | KIA 可易亚半导体 | | |
70N06 | isc N-Channel MOSFET Transistor 文件：297.66 Kbytes Page：2 Pages | ISC 无锡固电 | | |
70N06 | N-Channel 60-V (D-S) MOSFET 文件：1.27312 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
70N06 | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | |
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
丝印代码：D2PAK；N-Channel 60-V (D-S) MOSFET 文件：983.51 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
丝印代码：D2PAK；N-Channel 60-V (D-S) MOSFET 文件：983.46 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL POWER MOSFET 文件：224.51 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：367.33 Kbytes Page：9 Pages | UTC 友顺 | | ||
70 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：344.89 Kbytes Page：8 Pages | UTC 友顺 | | ||
25A, 60V, 0.025 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | | ||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | | ||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFET The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching | INTERSIL | | ||
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | FAIRCHILD 仙童半导体 | | ||
70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s | INTERSIL | |
70N06产品属性
- 类型
描述
- VGS(±V)：
±20
- ID(A)：
70
- RDS(ON)MAX.(mΩ)atVGS=10V：
15
- CISSTYP.(pF)：
1800
- COSSTYP.(pF)：
800
- CRSSTYP.(pF)：
130
- QgTYP.(nC)：
60
- QgsTYP.(nC)：
12
- QgdTYP.(nC)：
27
- VGS(th)(V)MIN.：
2
- VGS(th)(V)MAX.：
4
- TrrTYP.(nS)：
95
- QrrTYP.(nC)：
250
- Package：
TO-220_TO-220F_TO-220F2_TO-263_TO-262
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
24+ |
NA |
8000 |
只做原装，欢迎询价，量大价优 |
|||
N/A |
24+ |
TO-220 |
3 |
||||
VBsemi |
25+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBSEMI |
24+ |
TO263 |
48240 |
全新 发货1-2天 |
|||
KIA |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
|||
U |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
N/A |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
VBsemi(台湾微碧) |
2447 |
TO-263 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC |
25+ |
TO-220 |
20000 |
原装正品价格优惠,志同道合共谋发展 |
70N06芯片相关品牌
70N06规格书下载地址
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- 70N00000Z
- 70MT80KPBF
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- 70MT140KPBF
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- 70MT060WHTAPBF
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70N06数据表相关新闻
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2019-9-10
DdatasheetPDF页码索引
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