位置：首页 > IC中文资料第1538页 > SUD50N03-10BP
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SUD50N03-10BP | N-Channel 30-V (D-S) 175C MOSFET PWM Optimized | VishayVishay Siliconix 威世威世科技公司 |   | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 30-V (D-S), 175C MOSFET 文件：73.5 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) MOSFET 文件：916.51 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：916.57 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized 文件：80.29 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.01819 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
SUD50N03-10BP产品属性
- 类型
描述
- 型号
SUD50N03-10BP
- 功能描述
MOSFET 30V 20A 71W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
24+ |
SOT-252 |
25000 |
一级专营品牌全新原装热卖 |
|||
SILICON/芯科 |
2450+ |
SOT252 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Vishay(威世) |
2511 |
N/A |
11800 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
SILIONIX |
2025+ |
TO252 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY/威世 |
22+ |
TO252 |
3000 |
原装正品,支持实单 |
|||
VISHAY |
24+ |
TO-252 |
35200 |
一级代理/放心采购 |
|||
VISHAY |
25+ |
TO252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
VISHAY |
13+ |
TO-252 |
350 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SILICONIX |
00+ |
TO252/2 |
605 |
原装现货海量库存欢迎咨询 |
|||
VISHAY/威世 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
SUD50N03-10BP规格书下载地址
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2019-3-9
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