isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 40-V (D-S), 175C MOSFET

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N-Channel 40-V (D-S) 175C MOSFET, Logic Level

40 V – 30 A – Dual N-channel Power MOS FET Application: Automotive

Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance  RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A)  Low Ciss: Ciss = 1600 pF TYP. (VDS = 25 V)  Designed for automotive application a

N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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N-Channel MOSFET uses advanced trench technology

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Superior Avalanche Rugged Technology

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