位置：首页 > IC中文资料第5211页 > SUB85N08
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | ||
N-Channel 75-V (D-S) 175 Degree Celcious MOSFET 文件：63.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 75-V (D-S) 175C MOSFET | VishayVishay Siliconix 威世威世科技公司 | | ||
85A 80V N-channel Enhancement Mode Power MOSFET 文件：694.65 Kbytes Page：9 Pages | WXDH 东海半导体 | | ||
85A 80V N-channel Enhancement Mode Power MOSFET 文件：695.02 Kbytes Page：9 Pages | WXDH 东海半导体 | | ||
85A 80V N-channel Enhancement Mode Power MOSFET 文件：695.84 Kbytes Page：9 Pages | WXDH 东海半导体 | | ||
85A 80V N-channel Enhancement Mode Power MOSFET 文件：695.15 Kbytes Page：9 Pages | WXDH 东海半导体 | | ||
85A 80V N-channel Enhancement Mode Power MOSFET 文件：695.84 Kbytes Page：9 Pages | WXDH 东海半导体 | |
SUB85N08产品属性
- 类型
描述
- 型号
SUB85N08
- 功能描述
MOSFET 75V 85A 250W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
08+ |
TO-263 |
20000 |
普通 |
|||
VISHAY |
24+ |
TO-263 |
8866 |
||||
VISHAY/威世 |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
VISHAY |
25+ |
TO-263 |
16105 |
||||
VISHAY |
NEW |
TO-263 |
19567 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
VISHAY/威世 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY/威世 |
08+ |
TO-263 |
1021 |
||||
VISHAY/威世 |
22+ |
TO-263 |
20000 |
只做原装 品质保障 |
|||
VISHAY |
24+ |
D2PAK(TO-263) |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
VISHAY/威世 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
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SUB85N08规格书下载地址
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DdatasheetPDF页码索引
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