位置：首页 > IC中文资料第1274页 > STW8NB90
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW8NB90 | N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 |   | |
STW8NB90 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V (Min) ·Static Drain-Source On-Resistance -RDS(on) =1.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STW8NB90 | N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on)per a | STMICROELECTRONICS 意法半导体 | |
STW8NB90产品属性
- 类型
描述
- 型号
STW8NB90
- 功能描述
MOSFET N-CH 900V 8A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法 |
25+ |
TO-247 |
30000 |
全新原装现货,价格优势 |
|||
ST |
25+ |
TO-247 |
60 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
ST |
17+ |
TO-3P |
6200 |
||||
ST |
01+ |
TO-247 |
570 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
22+ |
TO-3P |
6000 |
十年配单,只做原装 |
|||
ST |
26+ |
TO-247 |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST |
24+ |
TO-3P |
6430 |
原装现货/欢迎来电咨询 |
STW8NB90规格书下载地址
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原装正品 支持实单
2022-3-30STW6N95K5
製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW8Q14C
STW8Q14C，全新原装当天发货或门市自取0755-82732291.
2020-3-15
DdatasheetPDF页码索引
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