型号 功能描述 生产厂家&企业 LOGO 操作
STW8NB90

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

STW8NB90

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V (Min) ·Static Drain-Source On-Resistance -RDS(on) =1.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a

STMICROELECTRONICS

意法半导体

N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on)per a

STMICROELECTRONICS

意法半导体

STW8NB90产品属性

  • 类型

    描述

  • 型号

    STW8NB90

  • 功能描述

    MOSFET N-CH 900V 8A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-7 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
16449
原厂直销,现货供应,账期支持!
ST
01+
TO-247
570
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
01+
TO-247
570
ST
24+
TO-3P
1000
原装现货热卖
ST
2020+
TO-247
60
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
23+
TO-247
8795
ST
06+
TO-247
2380
原装库存
ST
25+23+
TO-247
28525
绝对原装正品全新进口深圳现货
ST/意法
23+
TO-247
30000
全新原装现货,价格优势
ST/意法
24+
TO-247
570
只做原厂渠道 可追溯货源

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