位置：首页 > IC中文资料第5452页 > STU8NB90
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STU8NB90 | N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on)per a | STMICROELECTRONICS 意法半导体 |   | |
STU8NB90 | N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh??MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STU8NB90产品属性
- 类型
描述
- 型号
STU8NB90
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+23+ |
TO220 |
19297 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
N/A |
1000 |
|||||
ST/意法 |
26+ |
TO-251 |
76200 |
代理分销现货库存 本公司承诺原装正品假一赔百 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ST |
22+ |
MAX-220 |
20000 |
公司只做原装 品质保障 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST |
24+ |
原厂正品 |
9240 |
原装现货 假一赔百 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
10+ |
MAX-220 |
750 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2022+ |
MAX-220 |
750 |
原厂代理 终端免费提供样品 |
STU8NB90规格书下载地址
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