型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

Fast Switching Speed

文件:65.68 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60-V (D-S) MOSFET

文件:1.27408 Mbytes Page:7 Pages

VBSEMI

微碧半导体

STW75N06产品属性

  • 类型

    描述

  • 型号

    STW75N06

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-247

更新时间:2026-1-27 17:52:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IDT
23+
BGA
3000
原装正品假一罚百!可开增票!
IDT
24+
PLCC
25843
公司原厂原装现货假一罚十!特价出售!强势库存!
ST/意法
2517+
TO-251
8850
只做原装正品现货或订货假一赔十!
ON
26+
TO-220F
86720
全新原装正品价格最实惠 假一赔百
IDT
25+
BGA
3200
全新原装、诚信经营、公司现货销售
IDT
24+
39
IDT
16+
BGA
2500
进口原装现货/价格优势!
VBSEMI
20+
TO220
10115
ON/进口原
17+
TO-220
6200
IDT
23+
BGA
5000
原装正品,假一罚十

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