位置：首页 > IC中文资料第1270页 > STW60NE10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW60NE10 | N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a rema | STMICROELECTRONICS 意法半导体 |   | |
STW60NE10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=46A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.059Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STW60NE10 | N - CHANNEL 100V - 0.016ohm - 60A TO-247 STripFET POWER MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar | STMICROELECTRONICS 意法半导体 | |
STW60NE10产品属性
- 类型
描述
- 型号
STW60NE10
- 功能描述
MOSFET N-Ch 100 Volt 60 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
21 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
原装现货,实单价优 |
|||
ST |
23+ |
TO-3P |
15000 |
专做原装正品,假一罚百! |
|||
ST/意法半导体 |
21+ |
TO-247-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
23+ |
TO-247-3 |
12820 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-3P |
6200 |
||||
ST/意法半导体 |
23+ |
TO-247-3 |
8860 |
原装正品，支持实单 |
|||
ST |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ADI |
23+ |
TO247 |
8000 |
只做原装现货 |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
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STW60NE10规格书下载地址
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
2021-6-9STW48N60DM2
STW48N60DM2,当天发货0755-82732291全新原装现货或门市自取.
2020-10-25
DdatasheetPDF页码索引
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