Zener-protected

Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high e

N沟道800 V、0.95 Ohm典型值、5 A MDmesh K5功率MOSFET，IPAK封装

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

100 avalanche tested

文件：824.34 Kbytes Page：16 Pages

N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：709.72 Kbytes Page：13 Pages

N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：699.67 Kbytes Page：12 Pages

N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a PowerFLAT??5x6 VHV package

文件：898.56 Kbytes Page：16 Pages