Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Features

• Industry’s lowest RDS(on) x area

• Industry’s best figure of merit (FoM)

• Ultra-low gate charge

• 100 avalanche t

Applications

• Switching applications