Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，IPAK封装

N-channel 600 V, 1.00 typ., 5.5 A MDmesh M2 Power MOSFET in an SOT223-2 package

Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the de

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency

Extremely low gate charge

文件：1.08637 Mbytes Page：21 Pages

Extremely low gate charge

文件：1.08637 Mbytes Page：21 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.13144 Mbytes Page：11 Pages