Features

• Extremely low gate charge

• Excellent output capacitance (Coss) profile

• 100% avalanche tested

• Zener-protected

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

Applications

• Switching applications